Heterostructure-emitter bipolar transistor
- Heterostructure-emitter bipolar transistor
The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base. This is important as loss of minority carriers from the base to the emitter degrades analog performance. The main difference of the HEBT from the Heterojunction bipolar transistor (HBT) is that the emitter–base interface is the same as in a bipolar junction transistor (BJT) with the blocking energy gap being moved back into the emitter bulk region.
Functional Architecture
The main advantage of HEBT architecture, compared to the HBT is a simplified fabrication process for the emitter–base junction. In particular the HEBT does not require as tight parametric control during epitaxial growth, that equivalent abrupt or graded emitter structures might. This is very important as it is evident from scanning ion mass spectrometry data that out-diffusion base dopant into the emitter junction is difficult to control, as the base is, in general, very highly doped in order to enhance performance.
Application
The HEBT is well positioned as a potential candidate for key roles in high-frequency optoelectronic markets, similar to the Heterojunction bipolar transistor. Also of importance for optoelectronic hybrids is that HEBT can be constructed in any semiconductor system that permits the use of band-gap–altering alloys in the emitter.
References
doi: 10.1016/0038-1101(94)90231-3
doi: 10.1088/0268-1242/17/5/301
doi finder: [http://dx.doi.org]
External links
Wikimedia Foundation.
2010.
Look at other dictionaries:
Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… … Wikipedia
Gallium arsenide — Gallium arsenide … Wikipedia
Heterojunction — A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the… … Wikipedia
Light-emitting diode — LED redirects here. For other uses, see LED (disambiguation). Light emitting diode Red, pure green and blue LEDs of the 5mm diffused type Type Passive, optoelectronic Working principle Electr … Wikipedia