- Indium(III) phosphide
Chembox new
Name = Indium(III) phosphide
ImageFile = Indium(III) phosphide.jpg
ImageSize = 200px
ImageName = Indium(III) phosphide
IUPACName = Indium phosphide
OtherNames = Indium(III) phosphide
Name =
Section1 = Chembox Identifiers
CASNo = 22398-80-7
Section2 = Chembox Properties
Formula = InP
MolarMass = 145.792 g/mol
Appearance = Black cubic crystals.
Density = 4.81 g/cm3, solid.
Solubility = ? g/100 ml (?°C)
MeltingPt = 1062°C (1335.15 K)
BoilingPt = No information.
Section3 = Chembox Structure
MolShape =
Coordination =
CrystalStruct = Zinc Blende
Dipole =
Section7 = Chembox Hazards
MainHazards = In Compounds: Highly toxic via subcutaneous and moderately toxic via oral routes. Symptoms of acute indium intoxicationare anorexia, localized convulsive motions, hind-leg paralysis, pulmonary edema, necrotizing pneumonia, and renal and hepaticdamage with resultant dysfunction. Chronic indium intoxication leads to weight loss, poor growth, and extensive necrotic damage tothe liver and kidneys.
Section8 = Chembox Related
OtherAnions = InN, InAs, InSb.
OtherCations =Gallium phosphide ,Aluminium phosphide
Function = compounds
OtherFunctn =Gallium arsenide phosphide Indium phosphide (IndiumPhosphorus) is a binary
semiconductor composed ofindium andphosphorus . It is used in high-power and high-frequency electronics because of its superiorelectron velocity with respect to the more common semiconductorssilicon andgallium arsenide . It also has adirect bandgap , making it useful foroptoelectronics devices likelaser diode s.InP is also used as a substrate for epitaxial
indium gallium arsenide based opto-electronic devices.Indium phosphide also has one of the longest-lived optical
phonon s of any compound with the zincblendecrystal structure .Optical properties
The
Sellmeier equation that describes how the opticalrefractive index for indium phosphide depends onwavelength is given bywhere λ is the wavelength inmicrometre s.This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.
References
External links
* [http://www.ioffe.ru/SVA/NSM/Semicond/InP/index.html Extensive site on the physical properties of indium phosphide] (Ioffe institute)
* [http://www.onr.navy.mil/sci%5Ftech/archive%5Fto%5Fdvd/information/312%5Felectronics/ncsr/materials/inp.asp ONR National Compound Semiconductor Roadmap entry]
* [http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=3525 InP conference series] at IEEE
* [http://www.azom.com/details.asp?newsID=2888 Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier] (2006 news)uppliers
* [http://www.wafertech.co.uk/msds/msds_InP.html MSDS at Wafertech]
* [http://www.espimetals.com/msds's/indiumphosphide.pdf MSDS ar espimetals] (pdf)
* [http://www.arnaudelectronics.com/product/inp.html Arnaud electronics single crystal wafers]
* [http://www.wafertech.co.uk/data/polyInP.html Wafer technology polycrystalline]
* [http://www.vitesse.com/technologies/index.php?id=3 Vitesse DARPA funded 150GHz circuits]
Wikimedia Foundation. 2010.