Indium(III) nitride

Indium(III) nitride

Chembox new
Name = Indium(III) nitride
ImageFile =
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Section1 = Chembox Identifiers
CASNo = 25617-98-5
Section2 = Chembox Properties
Formula = InN
MolarMass =
Density =
Solvent =
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MeltingPt =
BoilingPt =
Section7 = Chembox Hazards
ExternalMSDS = [http://www.espimetals.com/msds's/indiumnitride.pdf External MSDS]

Indium nitride (IndiumNitrogen) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.

The bandgap of InN has now been established to be between 0.7 and 0.65 eV depending on temperature. The effective electron mass is between 0.04 and 0.07 "m"0. Electron mobility as high as >2000 cm²·V-1·s-1 has been reported. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.7eV) to the ultraviolet (3.4 eV).

Currently there is research into developing solar cells using the nitride based semiconductors. Using the alloy indium gallium nitride (InGaN), an optical match to the solar spectrum is obtained. The bandgap of InN allows a wavelengths as long as 1900 nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality. p-type doping of InN and indium-rich InGaN is one of the biggest challenges. Heteroepitaxial growth of InN with other nitrides (GaN, AlN) has proved to be difficult.

ee also

* Indium phosphide
* Boron nitride
* Aluminium nitride
* Gallium nitride

References

*Cite web |url=http://www.ioffe.rssi.ru/SVA/NSM/Semicond/InN/basic.html |title=Basic Parameters of Indium Nitride (InN) |publisher=Ioffe Physico-Technical Institute |accessdate=2008-06-17


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