Indium(III) arsenide

Indium(III) arsenide

Chembox new
Name = Indium(III) arsenide
ImageFile = Indium(III) arsenide.jpg
ImageName = Indium(III) arsenide
OtherNames = indium arsenide, indium monoarsenide
Section1 = Chembox Identifiers
CASNo = 1303-11-3

Section2 = Chembox Properties
Formula = InAs
MolarMass = 189.74 g.mol-1
Density = 5680 kg.m-3
Solvent = other solvents
SolubleOther = insoluble
MeltingPt = 942 °C
BoilingPt =

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor material, a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with melting point 942 °C.

Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1-3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide is similar to gallium arsenide.

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principially similar to alloying indium nitride with gallium nitride to yield indium gallium nitride.

Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots. [ [http://oemagazine.com/fromTheMagazine/feb02/eyeontech.html oe magazine - eye on technology ] ] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.

Researchers at the Faculty of Engineering at Lund University in Sweden have developed a prototype transistor using indium arsenide. [http://www.che.com/processing_and_handling/nanotechnology/3968.html]

ee also

* Indium phosphide
* Indium antimonide
* Gallium arsenide

References

External links

* [http://www.ioffe.rssi.ru/SVA/NSM/Semicond/InAs/index.html Ioffe institute data archive entry]
* [http://www.onr.navy.mil/sci_tech/31/312/ncsr/materials/inas.asp National Compound Semiconductor Roadmap] entry for InAs at ONR web site


Wikimedia Foundation. 2010.

Игры ⚽ Нужна курсовая?

Look at other dictionaries:

  • indium(III) arsenide — indžio(III) arsenidas statusas T sritis chemija formulė InAs atitikmenys: angl. indium(III) arsenide rus. индия(III) арсенид …   Chemijos terminų aiškinamasis žodynas

  • Indium(III) phosphide — Chembox new Name = Indium(III) phosphide ImageFile = Indium(III) phosphide.jpg ImageSize = 200px ImageName = Indium(III) phosphide IUPACName = Indium phosphide OtherNames = Indium(III) phosphide Name = Section1 = Chembox Identifiers CASNo = 22398 …   Wikipedia

  • Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… …   Wikipedia

  • Indium gallium phosphide — (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium… …   Wikipedia

  • Indium gallium nitride — (InGaN, IndiumxGallium1 xNitrogen) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its band gap can be tuned by varying the amount of… …   Wikipedia

  • indžio(III) arsenidas — statusas T sritis chemija formulė InAs atitikmenys: angl. indium(III) arsenide rus. индия(III) арсенид …   Chemijos terminų aiškinamasis žodynas

  • индия(III) арсенид — indžio(III) arsenidas statusas T sritis chemija formulė InAs atitikmenys: angl. indium(III) arsenide rus. индия(III) арсенид …   Chemijos terminų aiškinamasis žodynas

  • III-V-Halbleiter — Gruppe 13 14 15 Periode Schale 2 …   Deutsch Wikipedia

  • III/V-Halbleiter — Gruppe 13 14 15 Periode Schale 2 …   Deutsch Wikipedia

  • Gallium arsenide — Gallium arsenide …   Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”