Tantalum(III) nitride

Tantalum(III) nitride

Chembox new
Name = Tantalum(III) nitride
ImageFile =
ImageName =
OtherNames = Tantalum mononitride
Section1 = Chembox Identifiers
CASNo = 12033-62-4
Section2 = Chembox Properties
Formula = TaN
MolarMass = 194.955 g/mol
Appearance = black crystals
Density = 13.7 g/cm3, solid
MeltingPt = 3090°C
BoilingPt =
Section3 = Chembox Structure
CrystalStruct = hexagonal
Section7 = Chembox Hazards
EUClass = not listed

Tantalum(III) nitride (TaN) is an inorganic chemical compound. It is used to create barrier layers between copper and silicon in the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications. [ cite web |title =Tantalum Nitride Barrier Layer in Copper-based ICs |url= http://www.mse.berkeley.edu/classes/matsci102/F01reports/copperic.pdf#search=%22%22Tantalum%20nitride%22%22 | last=Ho |first =Johnny |coauthors =Kim Meekyung (MK), Santala Melissa |accessdate =2006-09-02 ] [cite web | url=http://www.iee.or.jp/honbu/back_number/journal/index_back_number/2005/2005_04e_05.pdf#search=%22%22Tantalum%20nitride%22%22 |title=Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance |last =Akashi |first =Teruhisa |accessdate =2006-09-02 | year=2005 ]

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