- Mercury(II) cadmium(II) telluride
HgCdTe or mercury
cadmium telluride (also cadmium mercury telluride, MCT or CMT) is analloy of CdTe andHgTe and is sometimes claimed to be the third semiconductor of technological importance aftersilicon andgallium(III) arsenide . The amount of cadmium (Cd) in the alloy (the alloy composition) can be chosen so as to tune the optical absorption of the material to the desiredinfrared wavelength . CdTe is asemiconductor with abandgap of approximately 1.5 eV at room temperature. HgTe is asemimetal , hence its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV.HgCdTe is usually referred to as MerCad Telluride, MerCadTel, or simply MerCad in the
infrared sensors community.Properties
Electronic
The
electron mobility of HgCdTe with a large Hg content is very high. At room temperature only InSb and InAs of common semiconductors used for infrared detection surpass HgCdTe's electron mobility.At 80K the electron mobility of Hg0.8Cd0.2Te can be several hundred thousand cm²/V/s. Electrons also have a long ballistic length at this temperature; theirmean free path can be several micrometres.Mechanical
HgCdTe is a soft material due to the weak bonds Hg forms with tellurium. It is a softer material than any common III-V semiconductor. The Mohs
hardness of HgTe is 1.9, CdTe is 2.9 and Hg0.5Cd0.5Te is 4. The hardness of lead salts is lower still.Thermal
The
thermal conductivity of HgCdTe is low; at low cadmium concentrations it is as low as 0.2 W.K-1m-1. This means that it is unsuitable for high power devices. Although, infraredlight-emitting diode s and lasers have been made in HgCdTe they must be operated cold to be efficient. Thespecific heat capacity is 150 J.kg-1K-1. [http://dx.doi.org/10.1088/1464-4258/8/1/014]Optical
HgCdTe is transparent in the infrared at photon energies below the energy gap. The
refractive index is high, reaching nearly 4 for high Hg content HgCdTe.Infrared detection
HgCdTe is the only common material that can detect infrared radiation in both of the accessible
atmospheric windows . These are from 3 to 5 µm (the mid-wave infrared window, abbreviatedMWIR ) and from 10 to 12 µm (the long-wave window,LWIR ). Detection in the MWIR and LWIR windows is obtained using 30% [(Hg0.7Cd0.3)Te] and 20% [(Hg0.8Cd0.2)Te] cadmium respectively. HgCdTe can also detect in the short wave infraredSWIR atmospheric windows of 2.2 to 2.4 µm and 1.5 to 1.8 µm.Owing to its cost, the use of HgCdTe has so far been largely restricted to the military field and
infrared astronomy research. Military technology has depended on HgCdTe fornight vision . In particular, the US air force makes extensive use of HgCdTe on all aircraft, and to equip airborne smart bombs. A variety of heat-seeking missiles are also equipped with HgCdTe detectors. HgCdTe detector arrays can also be found at most of the worlds major researchtelescope s including several satellites. Many HgCdTe detectors (such as "Hawaii" and "NICMOS" detectors) are named after the astronomical observatories or instruments for which they were originally developed.The main limitation of LWIR HgCdTe-based detectors is that they need cooling to temperatures near that of
liquid nitrogen (77K), to reduce noise due to thermally excited current carriers (see cooledinfrared camera ). MWIR HgCdTe cameras can be operated at temperatures accessible tothermoelectric coolers with a small performance penalty. Hence, HgCdTe detectors are relatively heavy compared to bolometers and require maintenance. On the other side, HgCdTe enjoys much higher speed of detection (frame rate) and is significantly more sensitive than some of its cheaper competitors.HgCdTe is often a material of choice for detectors in Fourier Transform Infrared Spectrometer (FTIR) instruments. This is because of the large spectral range of HgCdTe detectors and also the high quantum efficiency.
HgCdTe can be used as a
heterodyne detector, in which the interference between a local source and returned laser light is detected. In this case it can detect sources such as CO2 lasers. In heterodyne detection mode HgCdTe can be uncooled, although greater sensitivity is achieved by cooling. Photodiodes, photoconductors or photoelectromagnetic (PEM) modes can be used. A bandwidth well in excess of 1 GHz can be achieved with photodiode detectors.The main competitors of HgCdTe are less sensitive Si-based
bolometer s (see uncooledinfrared camera ),InSb and photon-countingsuperconducting tunnel junction (STJ) arrays. Quantum Well Infrared Photodetectors (QWIP ), manufactured from III-V semiconductor materials such asGaAs andAlGaAs , are another possible alternative, although their theoretical performance limits are inferior to HgCdTe arrays at comparable temperatures and they require the use of complicated reflection/diffraction gratings to overcome certain polarization exclusion effects which impact arrayresponsivity . In the future, the primary competitor to HgCdTe detectors may emerge in the form ofQuantum Dot Infrared Photodetectors (QDIP), based on either acolloidal or type-IIsuperlattice structure. Unique 3-Dquantum confinement effects, combined with the unipolar (non-exciton basedphotoelectric behavior) nature of quantum dots could allow comparable performance to HgCdTe at significantly higher operating temperatures. Initial laboratory work has shown promising results in this regard and QDIPs may be one of the first significantnanotechnology products to emerge.In HgCdTe, detection occurs when an infrared
photon of sufficient energy kicks anelectron from thevalence band to theconduction band . Such an electron is collected by a suitable externalreadout integrated circuit (ROIC) and transformed into an electric signal. The physical mating of the HgCdTe detector array to the ROIC is often referred to as a "Focal Plane Array ".In contrast, in a
bolometer , light heats up a tiny piece of material. The temperature change of the bolometer results in a change in resistance which is measured and transformed into an electric signal.Mercury zinc telluride has better chemical, thermal, and mechanical stability characteristics than HgCdTe. It has a steeper change of energy gap with mercury composition than HgCdTe, making compositional control harder.HgCdTe growth techniques
Bulk crystal growth
The first large scale growth method was bulk recrystallization of a liquid melt. This was the main growth method from the late 1950s to the early 1970s.
Epitaxial growth
Highly pure and crystalline HgCdTe is fabricated by
epitaxy on either CdTe or CdZnTe substrates. CdZnTe is acompound semiconductor , the lattice parameter of which can be exactly matched to that of HgCdTe. This eliminates most defects from the epilayer of HgCdTe. CdTe was developed as an alternative substrate in the '90s. It is not lattice-matched to HgCdTe, but is much cheaper, as it can be grown by epitaxy on silicon (Si) orgermanium (Ge) substrates.Liquid phase epitaxy (LPE), in which a substrate is repeatedly dipped into a liquid melt, gives the best results in terms of crystalline quality, and is still a common technique of choice for industrial production.In recent years,
molecular beam epitaxy (MBE) has become widespread because of its ability to stack up layers of different alloy composition. This allows simultaneous detection at several wavelengths. Furthermore, MBE, and alsoMOVPE , allow growth on large area substrates such as CdTe on Si or Ge, whereas LPE does not allow such substrates to be used.Research laboratories working on HgCdTe
US
* [http://www.eis.na.baesystems.com/index.htm BAE Systems, Electronics & Integrated Solutions]
* [http://www.uic.edu/depts/mplab/ Microphysics Laboratory] ,University of Illinois at Chicago
*University of Michigan , Ann Arbor
* West Virginia University, Morgantown, WV
* [http://www.nvl.army.mil/ U.S. Army Research, Development and Engineering Command (RDECOM) Communications and Electronics Research, Development and Engineering Center (CERDEC) Night Vision and Electronic Sensors Directorate (NVESD).(Former US Army Night Vision Laboratory) (Virginia)]
* [http://www.arl.army.mil/ US Army Research Laboratory, U.S. Army Research, Development and Engineering Command (RDECOM) (Maryland)]
* [http://www.EPIR.com EPIR Technologies Inc., IL]
* [http://www.drs.com/ DRS Technologies, TX]
* [http://www.raytheon.com/businesses/rncs/businesses/rvs/index.html/ Raytheon Vision Systems, CA]
* [http://www.rockwellscientific.com/ Teledyne Scientific & Imaging (Rockwell Scientific), CA]
* HRL Laboratories, LLC, CAAustralia
* [http://www.ee.uwa.edu.au/~mrg Microelectronics Research Group] , The University of
Western Australia .France
* Commissariat à l'Energie Atomique of Grenoble (CEA-LETI-
SLIR )
* SOFRADIR SaGermany
* [http://www.aim-ir.de/?lan=en AIM INFRAROT MODULE GmbH]
UK
*
QinetiQ Ltd.
*SELEX SAS Ltd.Russia
* Institute of Semiconductor Physics,
Novosibirsk .Republic of Korea
*
Dongguk University ,Seoul
*Korea Advanced Institute of Science and Technology ,Taejon
*Chungbuk National University ,Cheongju
*i3system Inc. ,Taejon Poland
* [http://www.vigo.com.pl VIGO System] S.A.
China
* National Laboratory for Infrared Physics (NLIP) and [http://www.sitp.ac.cn/ Shanghai Institute of Technical Physics (SITP)] ,
Chinese Academy of Sciences
*Kunming Institute of Physics (KIP)
* [http://www.ncrieo.com.cn/ North China Research Institute of Electro-optics (NCRIEO)]New Zealand
* Spitfire Semiconductors Ltd [http://www.spitfirenz.com/]
ee also
Related materials
*
Mercury telluride ,Cadmium telluride ,Mercury zinc telluride .Other infrared detection materials
*
Indium antimonide ,Indium arsenide ,Lead selenide ,QWIP ,QDIP .Other
*
Infrared ,thermography .References
* "Preparation and properties of HgTe and mixed crystals of HgTe-CdTe", W. D. Lawson, S. Nielson, E. H. Putley, and A. S. Young, J. Phys. Chem. Solids vol. 9, 325–329 (1959). (Earliest known reference)
* "Properties of Narrow-Gap Cadmium-Based Compounds", Ed. P. Capper (INSPEC, IEE, London, UK, 1994) ISBN 0-85296-880-9
* "HgCdTe Infrared Detectors", P. Norton, Opto-Electronics Review vol. 10(3), 159–174 (2002) [http://www.wat.edu.pl/review/optor/10(3)159.pdf]
* "HgCdTe infrared detector material: history, status and outlook", A Rogalski 2005 Rep. Prog. Phys. 68 2267-2336 doi|10.1088/0034-4885/68/10/R01
* "Band structures of HgCdTe and HgZnTe alloys and superlattices", A B Chen, Y M Lai-Hsu, S Krishnamurthy and M A Berding, Semicond. Sci. Technol. vol. 5 pp. S100-S102 (1990) doi|10.1088/0268-1242/5/3S/021
* E. Finkman and Y. Nemirovsky, J. Appl. Phys. 50, 4356 (1979).
* E. Finkman and S.E. Schacham, J. Appl. Phys. 56, 2896 (1984) doi|10.1063/1.333828
* "HOTEYE: a novel thermal camera using higher operating temperature infrared detectors", G. J. Bowen et al., Proceedings of theSPIE , Vol. 5783, pp. 392-400 (2005) doi|10.1117/12.603305.
*"Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors" M.O. Manasreh, Editor (Artech House, Norwood, MA), ISBN 0-89006-603-5 (1993).External links
* [http://www.onr.navy.mil/sci_tech/information/312_electronics/ncsr/materials/hgcdte.asp US National compound Semiconductor Roadmap] at the
Office of Naval Research .
* [http://www.npi.gov.au/database/substance-info/profiles/53.html National Pollutant Inventory - Mercury and compounds Fact Sheet]
* [http://www.i3system.com Korea i3system in Daejeon]
Wikimedia Foundation. 2010.