Isobutylgermane

Chembox new
ImageFile = Isobutylgermane-2D-skeletal.png ImageFile1 = Isobutylgermane-3D-balls.png ImageFile2 = Isobutylgermane-3D-vdW.png IUPACName = isobutylgermane
OtherNames = Isobutylgermanium trihydride
Section1 = Chembox Identifiers
CASNo = 768403-89-0
RTECS =
Section2 = Chembox Properties
Formula = C₄H₁₂Ge
MolarMass = 132.78 g mol⁻¹
Appearance = Clear Colorless Liquid
Density = 0.96 g/mL
Solubility = Insoluble in water
MeltingPt = <-78 °C
BoilingPt = 66 °C
Section8 = Chembox Other
OtherCpds = GeH₄

Isobutylgermane, (IBGe), (CH₃)₂CHCH₂GeH₃, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas. IBGe is useful in the deposition of pure Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications.

Properties

IBGe is a non-pyrophoric liquid source for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of semiconductors. It possesses very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C). [http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4MS9K7M-1&_user=208309&_coverDate=01%2F31%2F2007&_alid=754729900&_rdoc=3&_fmt=high&_orig=search&_cdi=5302&_sort=d&_docanchor=&view=c&_ct=41&_acct=C000014358&_version=1&_urlVersion=0&_userid=208309&md5=00462bdb50786f22769e4ca9e4c583bd Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE] ; D.V. Shenai et al, Rohm and Haas Electronic Materials; "Presentation at ICMOVPE-XIII, Miyazaki, Japan, June 1, 2006", and publication in "Journal of Crystal Growth" (2007)] , coupled with advantages of extremely low carbon incorporation and substantially reduced main group elemental impurities in epitaxially grown germanium comprising layers such as Ge, SiGe, SiGeC, strained silicon, GeSb and GeSbTe.

Uses

Rohm and Haas, IMEM and CNRS have developed a novel process to grow germanium films on germanium at low temperatures in a MOVPE reactor using isobutylgermane. The research targets Ge/III-V hetero devices. [http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4HNSJS8-X&_user=10&_handle=V-WA-A-W-AUY-MsSWYWW-UUA-U-AAZBCYVDBE-AAZAAZCCBE-WUWZDAWZE-AUY-U&_fmt=summary&_coverDate=01%2F25%2F2006&_rdoc=103&_orig=browse&_srch=%23toc%235302%232006%23997129997%23614855!&_cdi=5302&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=b727a26cf1d2921d65096fc1f93658bb Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films] ; Shenai-Khatkhate et al, Rohm and Haas Electronic Materials; "Presentation at ACCGE-16, Montana, USA, July 11, 2005", and publication in "Journal of Crystal Growth" (2006)] [http://electronicmaterials.rohmhaas.com/businesses/micro/metalorganics/default.asp?caid=290 Rohm and Haas Electronic Materials LLC] , Metalorganics and Germanium Sources for MOVPE.] It has been demonstrated that the growth of high quality germanium films at temperatures as low as 500 °C can be achieved [http://dx.doi.org/10.1016/j.jcrysgro.2008.04.009 MOVPE growth of homoepitaxial germanium] , M. Bosi et al. publication in "Journal of Crystal Growth" (2008)] . The low growth temperature and the new precursor are expected to eliminate a memory effect of germanium in the III-V material.

References

Further reading

* [http://www.onr.navy.mil/sci_tech/31/312/ncsr/glossary.asp#I IBGe] : Brief description from National Compound Semiconductor Roadmap.

* [http://www.lpn.cnrs.fr/fr/ELPHYSE/HeterOpSi.php Élaboration et Physique des Structures Épitaxiées (LPN) Hétérostructures III-V pour l’optoélectronique sur Si] : Article in French from LPN-CNRS, France.

* [http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4HNSJS8-X&_user=10&_handle=V-WA-A-W-AUY-MsSWYWW-UUA-U-AAZBCYVDBE-AAZAAZCCBE-WUWZDAWZE-AUY-U&_fmt=summary&_coverDate=01%2F25%2F2006&_rdoc=103&_orig=browse&_srch=%23toc%235302%232006%23997129997%23614855!&_cdi=5302&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=b727a26cf1d2921d65096fc1f93658bb Designing Novel Organogermanium OMVPE Precursors for High-purity Germanium Films] ; "Journal of Crystal Growth", January 25, 2006.

* [http://www.reed-electronics.com/semiconductor/article/CA6319057?industryid=3102 Ge Precursors for Strained Si and Compound Semiconductors] ; "Semiconductor International", April 1, 2006.

* [http://www.sichinamag.com/Article/html/2006-06/2006617011704.htm 摘要 随着Ge重要性的提高，需要寻找比GeH4更适用的前驱物。本文对用于应变Si和化合半导体集成电路的两种新型Ge前驱物的品质特性进行了探讨。当集成度不断增加,锗也变得日益重要。] ; "Semiconductor International Chinese Edition", June 1, 2006.
* [http://www.sijapan.com/content/0608vol3/features/featurs_0608_1.html 歪みSiと化合物半導体向けの Geプリカーサ] ; "Semiconductor International Japanese Edition", August 1, 2006.

* [http://www.compoundsemi.com/documents/view/news.php3?id=5899 Rohm and Haas Electronic Materials Devises Germanium Film Growth Process] ; "CompoundSemi News", September 23, 2005.

* [http://www.three-fives.com/equipment_materials_news/Sept05_mats_news/230905Rohm&Haas_Hi_purity_Ge_film.htm High Purity Germanium Film] ; "III-Vs Review", September 23, 2005.

* [http://ecsmeet2.peerx-press.org/ms_files/ecsmeet2/2006/03/13/00040125/00/40125_0_art_file_1_1142292562.pdf Development of New Germanium Precursors for SiGe Epitaxy] ; Deo Shenai and Egbert Woelk, "Presentation at 210th ECS Meeting, Cancun, Mexico, October 29, 2006".

External links

* [http://electronicmaterials.rohmhaas.com/businesses/micro/metalorganics/default.asp?caid=290 Rohm and Haas Electronic Materials LLC]

* [http://www.lpn.cnrs.fr/fr/Commun/ Laboratoire de Photonique et de Nanostructures, LPN CNRS]

* [http://www.imem.cnr.it IMEM-CNR Institute]