Spin torque transfer

Spin torque transfer

Spin torque transfer writing technology is a technology in which data is written by aligning the spin direction of the electrons flowing through a TMR (tunneling magneto-resistance) element. Data writing is performed by using a spin-polarized current with the electrons having the same spin direction. Spin torque transfer RAM (STT-RAMTM) has the advantages of lower power-consumption and better scalability over conventional MRAM. Spin torque transfer technology has the potential to make possible MRAM devices combining low current requirements and reduced cost.

Hynix Semiconductor and Grandis formed a partnership in April 2008 to explore commercial development of STT-RAM technology.Cite web |url=http://www.grandisinc.com/pdf/Grandis_PR_Apr01_2008.pdf |title=Grandis press release describing partnership with Hynix |accessdate=2008-08-15 |publisher=Grandis |date=2008-04-01] Cite web |url=http://www.hynix.com/gl/pr_room/news_data_readA.jsp?NEWS_DATE=2008-04-02:09:14:16&CurrentPageNo=1&SearchKind=4&SearchWord=&SELECT_DATE=&menuNo=02&m=01&s=01 |title=Hynix press release describing partnership with Grandis |accessdate=2008-08-15 |publisher=Hynix |date=2008-04-02]

ee also

*Magnetoresistive Random Access Memory (MRAM)
*Spin (physics)

References

External links

* [http://www.bama.ua.edu/~tmewes/Java/dynamics/MagnetizationDynamics2.shtml Spin torque applet]


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