Gallium arsenide phosphide
- Gallium arsenide phosphide
Gallium arsenide phosphide (GalliumArsenicPhosphorus) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide.
Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrate to form a GaP/GaAsP heterostructure. It can be doped with nitrogen (GaAsP:N) [Characteristics of Nitrogen-Doped GaAsP Light-Emitting Diodes, Tadashige Sato and Megumi Imai, Jpn. J. Appl. Phys. vol. 41 pp. 5995-5998 (2002) doi|10.1143/JJAP.41.5995] .
ee also
* Gallium arsenide
* Gallium phosphide
* Indium gallium arsenide phosphide
* Indium gallium phosphide
* Aluminium gallium arsenide phosphide
* Gallium indium arsenide antimonide phosphide
References
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Indium gallium phosphide — (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium… … Wikipedia