Electron beam ion source

Electron beam ion source

An electron beam ion source (EBIS) is a device used in atomic physics to produce highly charged ions by bombarding atoms with a powerful electron beam. Its principle of operation is shared by the Electron beam ion trap.

References

* Ian G. Brown, "Physics and Technology of Ion Sources", John Wiley & Sons Inc (1989), ISBN-13: 978-0471857082

* H. F. Beyer, H.-J. Kluge, V. P. Shevelko, in: "X-ray Radiation of Highly Charged Ions", Springer Series on Atoms and Plasmas, Springer Verlag, Berlin-Heidelberg 1997


Wikimedia Foundation. 2010.

Игры ⚽ Нужно сделать НИР?

Look at other dictionaries:

  • Electron Beam Ion Source — Eine Electron Beam Ion Trap (EBIT, Elektronenstrahl Ionenfalle) ist eine spezielle Art von Ionenfalle. Dieser Typ Falle eignet sich insbesondere für die Erzeugung und Speicherung hochgeladener Ionen. In ihr werden niedriggeladene Ionen… …   Deutsch Wikipedia

  • Electron Beam Ion Trap — Eine Electron Beam Ion Trap (EBIT) bzw. Elektronenstrahl Ionenfalle ist eine spezielle Art von Ionenfalle. Dieser Typ Falle eignet sich insbesondere für die Erzeugung und Speicherung hochgeladener Ionen. In ihr werden niedriggeladene Ionen… …   Deutsch Wikipedia

  • Ion source — An ion source is an electro magnetic device that is used to create charged particles. These are used primarily within mass spectrometers or particle accelerators.Mass spectrometry In mass spectrometry, an ion source is a piece of equipment used… …   Wikipedia

  • Electron beam induced deposition — (EBID) is a process of decomposing gaseous molecules by electron beam leading to deposition of non volatile fragments onto a nearby substrate. Process Focused electron beam of scanning electron microscope (SEM) or scanning transmission electron… …   Wikipedia

  • Electron beam physical vapor deposition — or EBPVD is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous… …   Wikipedia

  • Electron beam lithography — (often abbreviated as e beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist),cite book |last= McCord |first=M. A. |coauthors=M. J. Rooks |title=… …   Wikipedia

  • Electron beam physical vapor deposition — Traduction à relire Electron beam physical vapor deposition → …   Wikipédia en Français

  • Ion — Cation and Anion redirect here. For the particle physics/quantum computing concept, see Anyon. For other uses, see Ion (disambiguation). Hydrogen atom (center) contains a single proton and a single electron. Removal of the electron gives a cation …   Wikipedia

  • Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… …   Wikipedia

  • Ion beam deposition — (IBD) is a process of applying materials to a target through the application of an ion beam.In an ion source source materials gases or evaporated solids are ionized using electron ionization or by application of high electric fields (Penning ion… …   Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”