- Ridley Watkins Hilsum theory
According to the Ridley Watkins Hilsum (RWH) Theory the differential negative resistance that is developed in a bulk solid state III - V compound when either a
voltage or acurrent is applied to the terminals of the sample.There are two modes of negative resistance devices:
1. Voltage-controlled modes. 2. current-controlled modes.
In the voltage controlled mode the current density can be multivalued, whereas in the current controlled mode the voltage can be multivalued. In 1964 Kroemer suggested that Gunn's observations were in complete agreement with the RWH.
Theinitially homogeneous sample becomes electrically hetrogeneous in an attempt to reach stability. It is mathematically expressed as dI/dV = dJ/dE = negative resistance
See also
Gunn diode References
* cite book
last = Liao
first = Samual Y
title = MICROWAVE DEVICES and CIRCUITS 3rd edition
publisher = Prentice Hall
year = 1990
isbn = 0135832047* Citation
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first1=H
title= Theory of the Gunn effect
publisher=IEEE
contribution-url=http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1445406
year=1964
volume=52
issue=12
place=Proceedings of the IEEE
pages=1736-1736
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last1= Averkov
first1= Y.O.
title= The role of the Ridley-Watkins-Hilsum effect in stabilization ofmillimeter and sub-millimeter surface electromagnetic waves excited byan electron beam moving parallel to the surface of GaAs
publisher=IEEE
contribution-url=http://ieeexplore.ieee.org/Xplore/login.jsp?url=/iel5/7530/20496/00946832.pdf
year=2001
volume=1
issue=2001
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title= Transferred electron (Gunn) amplifiers and oscillators for microwave applications
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last3=Hovsepyan
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title= Photoelectric properties of lead molybdate crystals
publisher=WILEY-VCH Verlag GmbH & Co. KGaA
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year=1996
volume=157
issue=2
place=Institute for Physical Research, Armenian Academy of Sciences, Ashtarak
pages=421-425
DOI=10.1002/pssa.2211570226
date=1 February 1996* [http://www.geocities.com/semnews/milestones.html Milestones in Semiconductor Science and Technology, 1961]
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