Variable range hopping

Variable range hopping

Introduction

Variable range hopping or Mott variable range hopping, is a model describing low temperature conduction in strongly disordered systems with localized states. [Mott, N.F., "Phil. Mag.",19,835,1969]

It has a characteristic temperature dependence of:sigma= sigma_0e^{-(T_0/T)^{1/4for three dimensional conductance, and in general for d-dimensions:sigma= sigma_0e^{-(T_0/T)^{1/(d+1).

Hopping conduction at low temperatures is of great interest because of the savings the semiconductor industry could achieve if they were able to replace single-crystal devices with glass layers. [P.V.E. McClintock,D.J. Meredith,J.K. Wigmore. "Matter at Low Temperatures". Blackie. ISBN 0-216-91594-5.]

Derivation

The original Mott paper introduced a simplifying assumption that the hopping energy depends inversely on the cube of the hopping distance (in the three dimensional case). Later it was shown that this assumption was unnecessary, and this proof is followed here. [Apsley, N. and Huges, H.P., "Phil. Mag.",30,963,1974] In the original paper, the hopping probability at a given temperature was seen to depend on two parameters, R the spatial separation of the sites, and W, their energy separation. Apsley and Hughes noted that in a truly amorphous system, these variables are random and independent and so can be combined into a single parameter, the "range" mathcal{R} between two sites, which determines the probability of hopping between them.

Mott showed that the probability of hopping between two states of spatial separation R and energy separation W has the form::Psim exp [-2alpha R-frac{W}{kT}] where alpha^{-1} is the attenuation length for a hydrogen-like localised wave-function. This assumes that hopping to a state with a higher energy is the rate limiting process.

We now define mathcal{R} = 2alpha R+W/kT, the "range" between two states, so Psim exp (-mathcal{R}). The states may be regarded as points in a four-dimensional random array (three spatial coordinates and one energy coordinate), with the `distance' between them given by the range mathcal{R}.

Conduction is the result of many series of hops through this four-dimensional array and as short-range hops are favoured, it is the average nearest-neighbour `distance' between states which determines the overall conductivity. Thus the conductivity has the form:sigma sim exp (-overline{mathcal{R_{nn})where overline{mathcal{R_{nn}is the `average nearest-neighbour range'. The problem is therefore to calculate this quantity.

The first step is to obtain mathcal{N}(mathcal{R}), the total number of states within a range mathcal{R} of some initial state at the Fermi level. For d-dimensions, and under particular assumptions this turns out to be:mathcal{N}(mathcal{R}) = K mathcal{R}^{d+1}where K = frac{Npi kT}{3 imes 2^d alpha^d}.The particular assumptions are simply that overline{mathcal{R_{nn} is well less that the band-width and comfortably bigger than the interatomic spacing.

Then the probability that a state with range mathcal{R} is the nearest neighbour in the four-dimensional space (or in general the (d+1)-dimensional space) is:P_{nn}(mathcal{R}) = frac{partial mathcal{N}(mathcal{R})}{partial mathcal{R exp [-mathcal{N}(mathcal{R})] the nearest-neighbour distribution.

For the d-dimensional case then:overline{mathcal{R_{nn} = int_0^infty (d+1)Kmathcal{R}^{d+1}exp (-Kmathcal{R}^{d+1})dmathcal{R}.

This can be evaluated by making a simple substitution of t=Kmathcal{R}^{d+1} into the Gamma function, Gamma(z) = int_0^infty t^{z-1} e^{-t},mathrm{d}t

After some algebra this gives:overline{mathcal{R_{nn} = frac{Gamma(frac{d+2}{d+1})}{K^{frac{1}{d+1}and hence that:sigma propto exp (T^{-frac{1}{d+1)

Notes

Sadly, it is still not widely recognised that the Mott derivation contains a fundamental error, in that it simultaneously employs a distance R in relation to two very different parameters - the "actual" distance hopped and the radius of the sphere "within which" hopping occurs! Simple averaging of the hopping distance to yield 3/4 of the sphere radius (Mott & Davis 1979) is also inappropriate, since it fails to apply the necessary weightings to tunnelling over various distances within the sphere.

As a consequence of these errors, calculated values of the density of states (DOS) and other associated parameters are often totally physically unreasonable (DOS values in excess of 1039 /cm3/eV have been obtained, and values of 1028 are not untypical! - D.K.Paul & S.S.Mitra, Phys. Rev. Lett., Vol. 31, 1000, 1973 is a good example)See J. Optoelectronics and Advanced Materials Vol. 9, 84, 2007 provides some initial details.


Wikimedia Foundation. 2010.

Игры ⚽ Нужно решить контрольную?

Look at other dictionaries:

  • Variable range hopping — Sommaire 1 Introduction 2 Le modèle de Mott 3 Le VRH : une consommation intelligente de l’énergie 4 La conduction électrique d …   Wikipédia en Français

  • VRH — Variable Range Hopping (Academic & Science » Electronics) * Valley Regional Hospital (Medical » Hospitals) * Volunteer Reading Help (Community) * Value Recovery Holding (Business » Firms) * Variable Ride Height (Governmental » Transportation) *… …   Abbreviations dictionary

  • Coulomb gap — First introduced by M. Pollak [1], the Coulomb gap is a soft gap in the Single Particle Density of States (DOS) of a system of interacting localized electrons. Due to the long range Coulomb interactions, the single particle DOS vanishes at the… …   Wikipedia

  • Arrhenius equation — The Arrhenius equation is a simple, but remarkably accurate, formula for the temperature dependence of the rate constant, and therefore, rate of a chemical reaction. [http://www.iupac.org/goldbook/A00446.pdf Arrhenius equation] IUPAC Goldbook… …   Wikipedia

  • Crystal structure of boron-rich metal borides — Two single crystals of YB66 (1 cm diameter) grown by floating zone technique using (100) oriented seeds. In the top crystal, the seed (left from the black line) has same diameter as the crystal. In the bottom crystal (sliced), the seed is much… …   Wikipedia

  • Electrical resistivity and conductivity — This article is about electrical conductivity in general. For the specific conductance of aqueous solutions, see Conductivity (electrolytic). For other types of conductivity, see Conductivity. Electrical resistivity (also known as resistivity,… …   Wikipedia

  • Resistivity — Electrical resistivity (also known as specific electrical resistance) is a measure of how strongly a material opposes the flow of electric current. A low resistivity indicates a material that readily allows the movement of electrical charge. The… …   Wikipedia

  • Mott insulator — Mott insulators are a class of materials that should conduct electricity under conventional band theories, but are insulators when measured (particularly at low temperatures). This effect is due to electron electron interactions which are not… …   Wikipedia

  • Conductivite electrique — Conductivité électrique Pour les articles homonymes, voir Conductibilité. La conductivité électrique est l aptitude d un matériau à laisser les charges électriques se déplacer librement, autrement dit à permettre le passage du courant électrique …   Wikipédia en Français

  • Conductivité Électrique — Pour les articles homonymes, voir Conductibilité. La conductivité électrique est l aptitude d un matériau à laisser les charges électriques se déplacer librement, autrement dit à permettre le passage du courant électrique. Sommaire 1 Principe… …   Wikipédia en Français

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”