gate dielectric layer — izoliacinis užtūros sluoksnis statusas T sritis radioelektronika atitikmenys: angl. gate dielectric layer; gate insulation layer vok. Gatedielektrikumschicht, f; Gateisolationsschicht, f rus. изолирующий слой затвора, m; подзатворный… … Radioelektronikos terminų žodynas
gate-insulation layer — izoliacinis užtūros sluoksnis statusas T sritis radioelektronika atitikmenys: angl. gate dielectric layer; gate insulation layer vok. Gatedielektrikumschicht, f; Gateisolationsschicht, f rus. изолирующий слой затвора, m; подзатворный… … Radioelektronikos terminų žodynas
Dielectric wireless receiver — is a type of radiofrequency receiver front end featuring a complete absence of electronic circuitry and metal interconnects. It offers immunity against damage from intense electromagnetic radiation, produced by EMP and HPM sources. This receiver… … Wikipedia
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… … Wikipedia
High-k+Metal-Gate-Technik — Schematischer Querschnitt durch den Gate Aufbau eines Transistors in High k+Metal Gate Technik Die High k+Metal Gate Technik (HKMG Technik) bezeichnet in der Halbleitertechnik einen speziellen Aufbau von Metall Isolator Halbleiter… … Deutsch Wikipedia
Time-dependent gate oxide breakdown — (or time dependent dielectric breakdown) is a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Antenna effect — The antenna effect, more formally plasma induced gate oxide damage, is an effect that can potentially cause yield and reliability problems during the manufacture of MOS integrated circuits [ T. Watanabe, Y. Yoshida, “Dielectric Breakdown of Gate… … Wikipedia
Hot carrier injection — is the phenomenon in solid state devices or semiconductors where either an electron or a hole gains sufficient kinetic energy to overcome a potential barrier, becoming a hot carrier , and then migrates to a different area of the device. The term… … Wikipedia
