- Trimethylindium
Chembox new
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IUPACName = trimethylindium, trimethylindigane
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Section1 = Chembox Identifiers
CASNo = 3385-78-2
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Section2 = Chembox Properties
Formula = In(CH3)3
MolarMass = 159.93 g/mol
Appearance = white crystalline
Density = 1.568 g/mL
MeltingPt = 88º C
BoilingPt = Decomposes explosively and uncontrollably beyond 101º C. DO NOT ATTEMPT TO BOIL MOLTEN TMI.
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Section3 = Chembox Hazards
MainHazards = pyrophoric
FlashPt =
Autoignition =Trimethylindium (abbr: TMI), In(CH3)3, (CAS #: 3385-78-2) is the preferred
metalorganic source ofIndium forMetalorganic vapour phase epitaxy (MOVPE ) of indium-containingcompound semiconductor s, such as InP, InAs,InN ,InSb ,GaInAs ,InGaN , AlGaInP, AlInP, AlInGaNP etc. TMI is a white,crystalline and sublimable solid, with melting point 88 ºC. TMI is known to bepyrophoric , i.e. it ignites sponteneously upon contact with air; and its decomposition is often found to be uncontrollable as the temperature of its surrounding exceeds its melting point (i.e. > 88º C) and reaches 101 ºC and above. TMI is also reported to exhibitautocatalytic behavior during itsthermal decomposition [Chemistry of Materials (2000); doi|10.1021/cm990497f] . Hence TMI needs to be handled with utmost care and caution, e.g. stored in preferrably cool, dry place at 0-25º C, and operating temperatures not to exceed 50 ºC to avoid deterioration. TMI is also known to react extremely violently withoxidizer s and polyhalogenated compounds (such as CCl4 or CBrCl3) with which TMI is known to be incompatible. Hence the situations involving admixtures of TMI with oxidizers and polyhalogenated compounds must be avoided as potentially dangerous and explosive.emiconductor grade TMI
The advancements in synthesis and purification chemistries have now made it possible to attain highest purity in TMI (99.9999% pure or greater), which is imperative for improved performance of semiconductor applications. Recent reports indicate some of the best electrical properties for InP alloys so far, by
MOVPE using highest purity TMI available today, e.g. electron mobilities (Hall data) as high as 287,000 cm²/Vs at 77 K and 5400 cm²/Vs at 300 K, and background carrier concentration as low as 6×1013 cm−3 [Journal of Crystal Growth (2002); doi|10.1016/S0022-0248(02)01854-7] [Journal of Crystal Growth (2004); doi|10.1016/j.jcrysgro.2004.09.006] , which were not practically achievable in the past.Accurate vapor pressure equation for TMI
The
vapor pressure equations reported in the literature for TMI have been found to offer overestimated vapor pressure of TMI, often by as much as 20–40%. Not knowing the accurate vapor pressure has thus been a concern to crystal growers. In a recent study [Journal of Crystal Growth (2008); doi|10.1016/j.jcrysgro.2007.11.196] , it was expermentally confirmed that the vapor pressure equation, [http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4R8NBK8-2&_user=208309&_coverDate=04%2F30%2F2008&_alid=722016709&_rdoc=1&_fmt=full&_orig=search&_cdi=5302&_sort=d&_docanchor=&view=c&_ct=242&_acct=C000014358&_version=1&_urlVersion=0&_userid=208309&md5=6bc13896c63296fb0ccfc09ae3fd666clog P (Torr)=10.98–3204/T (K)] , provides the most accurate vapor pressures of TMI within a wide range ofMOVPE growth conditions.References
External links
* [http://osulibrary.oregonstate.edu/specialcollections/rnb/19/19-049-large.html Interesting research notes] by
Linus Pauling in re: Trimethylindium and its structure; "Notebook # 19, Page 049", August 1955.* [http://electronicmaterials.rohmhaas.com/businesses/micro/metalorganics/vapor.asp?caid=291 Interactive Vapor Pressure Chart for metalorganics] .
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