Si/SiGe resonant tunnel diode

Si/SiGe resonant tunnel diode

A Si/SiGe resonant tunnel diode is a resonant tunnel diode based on Si/SiGe heterojunctions. Both hole tunneling and electron tunneling have been observed. But the performance of Si/SiGe resonant tunnel diode is limited mainly because of the limited band edge discontinuity in both the valence band and the conduction band.

Hole Tunneling

Resonant tunneling of holes through Si/SiGe heterojunctions was attemptedfirst because of the typically relatively larger valence band discontinuityin Si/SiGe heterojunctions than the conduction band discontinuity for(compressively) strained Si1-xGex layers grown on Si substrates.This has been observed, but negative differential resistancewas only observed at low temperatures (peak to valley current ratio of 1.5 at 77 K, and 2 at 4 K)and not at room temperature.ref|Gennser90

Electron Tunneling

Resonant tunneling of electrons through Si/SiGe heterojunctionswas obtained later, with a limited peak-to-valley current ratio (PVCR)of 1.2 at room temperature.ref|Ismail91 Subsequent developments haverealized Si/SiGe RTDs (electron tunneling) with a PVCR of 2.9 with a PCD of 4.3kA/cm2ref|See01a and a PVCR of 2.43 with a PCD of 282 kA/cm²at room temperature.ref|See01b


# U. Gennser, V.P. Kesan, S.S. Iyer, T.J. Bucelot, and E.S. Yang, J. Vac. Sci. Technol. B 8, 210 (1990)
# K. Ismail, B.S. Meyerson, and P.J. Wang, Electron resonant tunneling in Si/SiGe double barrier diodes, Appl. Phys. Lett. 59, 973 (1991)
# P. See, D.J. Paul, B. Hollander, S. Mantl, I. V. Zozoulenko, and K.-F. Berggren, High Performance Si/Si1 xGex Resonant Tunneling Diodes, IEEE Electron Device Letters 22, 182 (2001)
# P. See and D.J. Paul, The scaled performance of Si/Si1-xGexresonant tunneling diodes, IEEE Electron Device Letters 22, 582 (2001)

See also

*Si Esaki tunnel diode
*Si/SiGe resonant interband tunnel diode

Wikimedia Foundation. 2010.

Игры ⚽ Нужна курсовая?

Look at other dictionaries:

  • Resonant tunnelling diode — A resonant tunnel diode (RTD) is a device which uses quantum effects to produce negative differential resistance (NDR). As an RTD is capable of generating a terahertz wave at room temperature, it can be used in ultra high speed circuitry.… …   Wikipedia

  • Tunnel diode — A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave frequency region, by using quantum mechanical effects. It was invented in 1958 by Leo Esaki, who in 1973 received the… …   Wikipedia

  • Resonant interband tunnel diode — Resonant interband tunnel diodes (RITDs) combine the structures and behaviors ofboth intraband resonant tunnel diodes (RTDs) and conventional interband tunnel diodes,in which electronic transitions occur between the energy levels in the… …   Wikipedia

  • Si/SiGe resonant interband tunnel diode — A Si/SiGe resonant interband tunnel diode (RITD) is a type of resonant interband tunnel diodeswhich is based on Si/SiGe materials.All types of tunnel diodes, including Si/SiGe resonant interband tunnel diodes,make use of the quantum mechanical… …   Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”