Aluminium indium arsenide — Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1 xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 this… … Wikipedia
Aluminium antimonide — Chembox new Name = Aluminium antimonide IUPACName = OtherNames = Section1 = Chembox Identifiers SMILES = CASNo = 25152 52 7 RTECS = Section2 = Chembox Properties Formula = AlSb MolarMass = 148.8 g/mol Appearance = Density = 4200 kg/m3 Solubility … Wikipedia
Aluminium gallium arsenide — (also aluminum gallium arsenide) (AlxGa1 xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between… … Wikipedia
Aluminium gallium indium phosphide — (AluminumGalliumIndiumPhosphorus, also AlInGaP, InGaAlP, etc.) is a semiconductor material.AlGaInP is used in manufacture of light emitting diodes of high brightness red, orange, green, and yellow color, to form the heterostructure emitting light … Wikipedia
Gallium arsenide — Gallium arsenide … Wikipedia
Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… … Wikipedia
Boron arsenide — Chembox new Name = Boron arsenide ImageFile = Boron arsenide.jpg ImageName = Boron arsenide Section1 = Chembox Identifiers CASOther = 12005 69 5 Section2 = Chembox Properties Formula = BAs MolarMass = 85.733 g/mol Appearance = Density = 5.22… … Wikipedia
Gallium indium arsenide antimonide phosphide — (GalliumIndiumArsenicAntimonyPhosphorus or GaInPAsSb) is a semiconductor material.Research has shown that GaInAsSbP can be used in the manufacture of mid infrared light emitting diodes [Room temperature midinfrared electroluminescence from… … Wikipedia
Gallium arsenide phosphide — (GalliumArsenicPhosphorus) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide.Gallium arsenide phosphide is used for manufacturing red, orange and yellow light emitting diodes. It is often grown on gallium phosphide… … Wikipedia
gallium-aluminum arsenide — galio aliuminio arsenidas statusas T sritis radioelektronika atitikmenys: angl. gallium aluminum arsenide vok. Gallium Aluminium Arsenid, n rus. арсенид галлия и алюминия, m pranc. arséniure de gallium aluminium, m … Radioelektronikos terminų žodynas
