Walter H. Schottky

Walter H. Schottky

Infobox Scientist
name = Walter H. Schottky
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caption = Walter H. Schottky
birth_date = 23 July 1886
birth_place = Zürich, Switzerland
death_date = 4 March 1976, Pretzfeld, West Germany
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nationality = German
ethnicity =
field = physics
work_institutions = Siemens
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known_for = screen-grid vacuum tube tetrode Schrot effect
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prizes = Hughes medal in 1936
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Walter Hermann Schottky (23 July 1886, Zürich, Switzerland – 4 March 1976, Pretzfeld, West Germany) was a German physicist who invented the screen-grid vacuum tube in 1915 and the tetrode in 1919 while working at Siemens. In 1938, Schottky formulated a theory predicting the Schottky effect, now used in Schottky diodes.

He was awarded the Royal Society's Hughes medal in 1936 for his discovery of the Schrot effect (spontaneous current variations in high-vacuum discharge tubes, called by him the "Schrot effect": literally, the "small shot effect") in thermionic emission and his invention of the screen-grid tetrode and a superheterodyne method of receiving wireless signals.

In 1964 he received the Werner-von-Siemens-Ring honoring his ground-breaking work on the physical understanding of many phenomena that led to many important technical appliances, among them tube amplifiers and semiconductors.

Note: The invention of superheterodyne is usually attributed to Edwin Armstrong. However, Schottky published an article in Proc. IRE that he had also invented something similar.

* 1939: first p-n junction

His father was mathematician Friedrich Hermann Schottky (1851–1935).

Walter Schottky Institute (Germany) was named after him.

See also

*Schottky defect

External links

* [http://www.geocities.com/bioelectrochemistry/schottky.htm Biography of Walter H. Schottky]


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  • Walter Schottky — Naissance 23 juillet 1886 Zurich (  Suisse) Décès 4 mars 1976 Forchheim ( …   Wikipédia en Français

  • Schottky diode — The Schottky diode (named after German physicist Walter H. Schottky; also known as hot carrier diode) is a semiconductor diode with a low forward voltage drop and a very fast switching action.In the early days of wireless, cat s whisker detectors …   Wikipedia

  • schottky defect — ˈshätkē noun Usage: usually capitalized S Etymology: after Walter Schottky b1886 German physicist : a defect in a crystal lattice created by removing an ion from its normal site and placing it on the crystal surface * * * /shot kee/, Crystall. an …   Useful english dictionary

  • Schottky — Diode Schottky Symbole de la diode Schottky Une diode Schottky (nommée d après le physicien allemand Walter H. Schottky) est une diode qui a un seuil de tension directe très bas et un temps de commutation très court. Ceci permet la détection des… …   Wikipédia en Français

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  • Schottky defect — A Schottky defect is a type of point defect in a crystal lattice named for Walter H. Schottky. The defect forms when oppositely charged ions leave their lattice sites, creating vacancies. These vacancies are formed in stoichiometric units, to… …   Wikipedia

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  • Schottky defect — /shot kee/, Crystall. an unoccupied position in a crystal lattice caused by the relocation of an atom or ion from the interior to the surface of the crystal. [named after Walter Hans Schottky (1886 1976), German physicist, who described it] * * * …   Universalium

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