oxide+of+silicon

  • 31Hafnium(IV) oxide — chembox new ImageFile = Hafnium(IV) oxide.jpg ImageSize = 200px ImageName = Hafnium(IV) oxide IUPACName = Hafnium(IV) oxide OtherNames = hafnium dioxide, hafnia Section1 = Chembox Identifiers Abbreviations = CASNo = 12055 23 1 EINECS = PubChem =… …

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  • 32Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… …

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  • 33Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …

    Deutsch Wikipedia

  • 34Metal Oxide Semiconductor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …

    Deutsch Wikipedia

  • 35Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …

    Deutsch Wikipedia

  • 36metal oxide semiconductor —    (MOS)    A type of computer memory utilizing 1/4 inch square slices of silicon. These silicon slices require constant electric current for the data to be retained …

    IT glossary of terms, acronyms and abbreviations

  • 37Buffered oxide etch — Le buffered oxide etch (BOE oxyde gravant tamponné) est une solution gravante utilisée en micro fabrication. Cette solution est essentiellement utilisée pour graver des couches minces de dioxyde de silicium (SiO2) ou de nitrure de silicium… …

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  • 38LOCOS — LOCOS, short for LOCal Oxidation of Silicon, is a microfabrication process where silicon dioxide is formed in selected areas on a silicon wafer having the Si SiO2 interface at a lower point than the rest of the silicon surface.This technology was …

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  • 39Thermal oxidation — In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react… …

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  • 40Moisture analysis — covers a variety of methods for measuring moisture content in both high level and trace amounts in solids, liquids, or gases. Moisture in percentage amounts is monitored as a specification in commercial food production. There are many… …

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