Intel TeraHertz

Intel TeraHertz

Intel TeraHertz is Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages. According to Intel, the new design could use only 0.6 volts. Intel TeraHertz was unveiled in 2001. At the moment, as of 2008, it is not used in processors.

ee also

*Silicon on insulator

External links

* [http://news.zdnet.co.uk/hardware/0,1000000091,2099821,00.htm Intel terahertz transistor breaks speed limits ]


Wikimedia Foundation. 2010.

Игры ⚽ Нужен реферат?

Look at other dictionaries:

  • Intel TeraHertz — fue un concepto de diseño para una nueva generación de transistores, presentado por Intel en 2001. Utilizando nuevos materiales, que lograrían un aumento dramático en la velocidad de operación de dicho transistor, eficiencia energética y… …   Wikipedia Español

  • Intel — For other uses, see Intel (disambiguation). Coordinates: 37°23′16.54″N 121°57′48.74″W / 37.3879278°N 121.9635389°W / 37.3879278; 121.9 …   Wikipedia

  • Centrino — Components of the Centrino platform. From right, clockwise: Intel PRO/Wireless network adapter, Intel mobile processor, Intel mobile southbridge chipset, and Intel mobile northbridge chipset. The Centrino brand represents Intel Wi Fi and WiMAX… …   Wikipedia

  • Mobile Internet device — Not to be confused with Standard MIDI File. A mobile Internet device (MID) is a multimedia capable mobile device providing wireless Internet access.[1][2][3] They are designed to provide entertainment, information and location based services for… …   Wikipedia

  • McAfee — This article is about the computer security company McAfee, Inc.. For other uses, see McAfee (disambiguation). McAfee, Inc. Type Wholly owned subsidiary Industry Computer software Computer securit …   Wikipedia

  • Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… …   Wikipedia

  • Multigate device — A multigate device or multiple gate field effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces …   Wikipedia

  • Größenordnung (Frequenz) — Dieser Artikel stellt eine Zusammenstellung von Frequenzen verschiedener Größenordnungen zu Vergleichszwecken dar. Grundeinheit der Frequenz im SI Einheitensystem ist 1 Hertz (1/s), das Formelzeichen f und das Einheitenzeichen Hz (1/s). Weitere… …   Deutsch Wikipedia

  • Innovations for High Performance Microelectronics — Leibniz Institut für innovative Mikroelektronik Logo der IHP GmbH Kategorie: Forschungseinrichtung Träger: Land Branden …   Deutsch Wikipedia

  • Liste der Frequenzen — Dieses ist eine Zusammenstellung von Frequenzen verschiedener Größenordnungen zu Vergleichszwecken. Grundeinheit der Frequenz im SI Einheitensystem ist 1 Hertz (1/s), das Formelzeichen f und das Einheitenzeichen Hz (1/s). Weitere im folgenden… …   Deutsch Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”