Induced high electron mobility transistor
- Induced high electron mobility transistor
In contrast to a modulation-doped HEMT, an induced high electron mobility transistor provides the flexibility to tune different electron densities with a top gate. Since the charge carriers are "induced" to the 2DEG plane rather than created by dopants. The absence of doped layer enhance the mobility significantly when compared to their modulation-doped counterparts.
This level of cleaness provide oppunitunities to do research in Quantum Billiard for quantum chaos studies, or applications in ultra stable and ultra sensitive electronics devices.
At the University of New South Wales, in the School of Physics, department of Condensed matter physics, Quantum Electronic Devices Group (QED), researchers have created both n-type and p-type HEMT for studying fundamental quantum physics of electronic devices.
External links
* [http://www.phys.unsw.edu.au/QED/ University of New South Wales, Quantum Electronic Devices Group]
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