EKV MOSFET Model

The EKV Mosfet Model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design. [Citation
last1=Enz
first1=C. C.
last2=Krummenacher
first2=F.
last3=Vittoz
first3=E.A.
author-link=
publication-date=July 1995
date=
year=1995
title=An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications
periodical=Analog Integrated Circuits and Signal Processing Journal on Low-Voltage and Low-Power Design
series=
publication-place=
place=
publisher=
volume=8
issue=
pages=83-114
url=
issn=
doi=
oclc=
accessdate=] It was developed by C. C. Enz, F. Krummenacher and E. A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s. [Citation
last1=Enz
first1=C. C.
last2=Krummenacher
first2=F.
last3=Vittoz
first3=E.A.
author-link=
publication-date=June 1987
date=
year=1987
title=A CMOS Chopper Amplifier
periodical=IEEE Journal of Solid-State Circuits
series=
publication-place=
place=
publisher=
volume=22
issue=3
pages=335-342
url=
issn=
doi=
oclc=
accessdate=] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when V_bulk=V_source then the MOSFET is subthreshold when V_gate-source < V_Threshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design.

References

ee also

* Transistor models
* MOSFET
* Ngspice
* SPICE

External links

*Web Page of Christian Enz [http://people.epfl.ch/christian.enz]
*Web Page of François Krummenacher [http://people.epfl.ch/francois.krummenacher]
*About Eric Vittoz [http://www.ieee.org/portal/pages/about/awards/bios/2004ssc.html]
*Main Web Page for the EKV Model [http://legwww.epfl.ch/ekv/]