- Fractional quantum Hall effect
The fractional quantum Hall effect (FQHE) is a physical phenomenon in which a certain system behaves as if it were composed of particles with charge smaller than the
elementary charge . Its discovery and explanation were recognized by the 1998Nobel Prize in Physics .Introduction
The fractional quantum Hall effect (FQHE) is a manifestation of simple collective behaviour in a two-dimensional system of strongly interacting electrons. At particular magnetic fields, the electron gas condenses into a remarkable state with liquid-like properties. This state is very delicate, requiring high quality material with a low carrier concentration, and extremely low temperatures. As in the integer
quantum Hall effect , a series of plateaus forms in the Hall resistance. Each particular value of the magnetic field corresponds to a filling factor (the ratio of electrons to magnetic flux quanta):"",
where p and q are integers with no common factors. Here "q" turns out to be an odd number with the exception of two enigmatic filling factors 5/2 and 7/2. The principal series of such fractions are
: etc.,
and
:, etc.
There are two main theories of the FQHE.
*Fractionally-charged
quasiparticle s: this theory, proposed by Laughlin, hides the interactions by constructing a set of quasiparticles with charge , where the fraction is as above.*Composite Fermions: this theory was proposed by Jain, and Halperin, Lee and Read. In order to hide the interactions, it attaches two (or, in general, an even number) flux quanta to each electron, forming integer-charged quasiparticles called composite fermions. The fractional states are mapped to the integer QHE. This makes electrons at a filling factor 1/3, for example, behave in the same way as at filing factor 1. A remarkable result is that filling factor 1/2 corresponds to zero magnetic field. Experiments support this.
The FQHE was experimentally discovered in 1982 by Daniel Tsui and Horst Störmer, in experiments performed on
gallium arsenide heterostructure s developed byArthur Gossard . The effect was explained byRobert B. Laughlin in 1983, using a novel quantum liquid phase that accounts for the effects of interactions between electrons. Tsui, Störmer, and Laughlin were awarded the 1998 Nobel Prize for their work. Although it was generally assumed that the discrete resistivity jumps found in the Tsui experiment were due to the presence of fractional charges (i.e., due to the emergence ofquasiparticle s with charges smaller than an electron charge), more direct observation of these charges came later (see below).Fractionally charged quasiparticles are neither
boson s norfermion s and exhibitanyon ic statistics. The fractional quantum Hall effect continues to be influential in theories abouttopological order . Certain fractional quantum Hall phases appear to have the right properties for building atopological quantum computer .Other evidence for fractionally-charged quasiparticles
Apart from the FQHE itself, further evidence has continued emerged that specifically supports the understanding that there are fractionally-charged quasiparticles in an electron gas under FQHE conditions.
In 1995, the fractional charge of Laughlin quasiparticles was measured directly in a quantum antidot electrometer at Stony Brook University,
New York . [ [http://dx.doi.org/10.1126/science.267.5200.1010 "Measurement of fractional charge" (Science Report) 1995] . See also [http://quantum.physics.sunysb.edu/index.html Description on the researcher's website] .] In 1997, two groups of physicists at theWeizmann Institute of Science inRehovot ,Israel , and at theCommissariat à l'énergie atomique laboratory nearParis , detected such quasiparticles carrying anelectric current , through measuring quantumshot noise . [ [http://physicsweb.org/article/news/1/10/7/1 "Fractional charge carriers discovered" - Physics Web article 1997-10-24] .] [R. de-Picciotto, M. Reznikov, M. Heiblum, V. Umansky, G. Bunin and D. Mahalu, Nature 389, 162-164 (1997) doi|10.1038/38241]See also
*
Laughlin wavefunction References
* [http://www.sp.phy.cam.ac.uk/SPWeb/research/FQHE.html University of Cambridge, Semiconductor Physics Group Research] .
* D.C. Tsui, H.L. Stormer, and A.C. Gossard, Phys. Rev. Lett. 48, 1559 (1982) doi|10.1103/PhysRevLett.48.1559
* R.B. Laughlin, Phys. Rev. Lett. 50, 1395 (1983) doi|10.1103/PhysRevLett.50.1395
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