- Ghavam Shahidi
Ghavam Shahidi is an
Iranian-American electrical engineer andIBM Fellow .He studied electrical engineering at
MIT , where he wrote a PhD thesis on "velocity overshoot in deeply scaledMOSFET s", under supervision of ProfessorDimitri Antoniadis . Shahidi joinedIBM Research in 1989, where he initiated and subsequently led the development ofsilicon on insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology at IBM. This work resulted in the qualification of multiple CMOS SOI technologies and their transfer to manufacturing; establishment of design infrastructure; and the first mainstream use of SOI. He remained with IBM Microelectronics as the director of high-performance logic development until 2003. He then moved back to IBM's Watson's Laboratory as the Director of Silicon Technology. Shahidi received theInstitute of Electrical and Electronics Engineers 'J J Ebers Award in 2006.
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