Robert H. Dennard

Robert H. Dennard

Infobox Scientist
name = Robert H. Dennard


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awards = IEEE Edison Medal


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Robert Dennard (born September 5, 1932) is an American electrical engineer and inventor.

Dennard was born in Terrell, Texas, U.S.. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958.

In 1968, he invented dynamic random access memory (DRAM). Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 essentially observed that MOSFETs would continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency would improve provided geometric dimensions, voltages, and doping concentrations were consistently scaled such as to maintain the same electric field. The evolution of microelectronics we have witnessed since along with Moore's law that captures it rest on this property.

Awards and Honors

*US National Medal of Technology [ [http://www.technology.gov/Medal/p_Recipients.htm#1988 1988 National Medal of Technology.] ]
*2001 IEEE Edison Medal [ [http://www.ieee.org/portal/pages/about/awards/bios/2001edison.html 2001 IEEE Edison Medal.] ] ,
*Received the [http://www.fi.edu/winners/2007/dennard_robert.faw?winner_id=4407 2007 Benjamin Franklin Medal in Electrical Engineering] from The Franklin Institute.

References

External links

* [http://web.mit.edu/invent/iow/Dennard.html MIT Inventor of the Week: Archive - Robert Dennard]
* [http://www.ieee.org/organizations/history_center/legacies/dennard.html Bio IEEE Legacies]


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